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Scanning capacitance microscopy (SCM) is known to be a valuable tool for carrier mapping and profiling on nanoscale semiconductor samples Certain applications, however, such as quantitative capacitance microscopy on InAs quantum dots, e g require low modulation frequencies and complete darkness, which are requirements completely incompatible with the current commercial SCM systems relying on a laser feedback system For this reason, an intercepted feedback method was developed, which allo

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In this work, the influence of the tip geometry in scanning capacitance microscopy is investigated experimentally and theoretically on metal-oxide-semiconductor- !MOS " and Schottky-type junctions on gallium-arsenide !GaAs " Using a two-dimensional model we find that on Schottky-type junctions theelectric field around the tip is screened by the surface states and that the essential parameters entering the capacitance versus voltage C!V " characteristics are the doping level and the contact

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The relative electric permittivity of liquid methylbenzene has been determined with an uncertainty of 0 01% from measurements of the resonance frequency of the lowest order inductive-capacitance mode of a re-entrant cavity (J Chem Thermodyn 2005, 37, 684–691) at temperatures between (290 and 406) K and pressures below 20 MPa and at T ) 297 K with a MicroElectricalMechanical System (MEMS) interdigitated comb capacitor For the re-entrant cavity, the working equations were a combination of the

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